A lot has been written on SemiWiki about FinFETS, it is one of the top trending search terms, but there is some confusion about the process naming so let me attempt to explain. In planar process technologies the 28nm or 20nm implies the minimum transistor gate length of 28nm or 20nm. The picture below shows the difference in structure of a bulk planar FET compared to a FinFET. The FinFET is effectively like a planar FET that has been rotated 90 degrees so that it stands up out of the substrate. This has two main advantages: 1) The channel depth is now defined by the width of the Fin and so no deep channel currents can flow.

The Germanium Planar FET-A New Device for Radio Applications

Cite This

DA. N.. Leonard, ST. T.. Ou, and JA. H.. Abernathy, 'The Germanium Planar FET-A New Device for Radio Applications,' J. Audio Eng. Soc., vol. 15, no. 2, pp. 183-189, (1967 April.). doi: DA. N.. Leonard, ST. T.. Ou, and JA. H.. Abernathy, 'The Germanium Planar FET-A New Device for Radio Applications,' J. Audio Eng. Soc., vol. 15 Issue 2 pp. 183-189, (1967 April.). doi:
Abstract: Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

Trenchfet Vs Planar Fet

@article{leonard1967the,
author={leonard, david n. and ou, steve t. and abernathy, jack h.},
journal={journal of the audio engineering society},
title={the germanium planar fet-a new device for radio applications},
year={1967},
volume={15},
number={2},
pages={183-189},
doi={},
month={april},} @article{leonard1967the,
author={leonard, david n. and ou, steve t. and abernathy, jack h.},
journal={journal of the audio engineering society},
title={the germanium planar fet-a new device for radio applications},
year={1967},
volume={15},
number={2},
pages={183-189},
doi={},
month={april},
abstract={recently developed germanium planar junction field-effect transistors are described, with emphasis on vhf characteristics. broadcast-band fm tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and agc characteristics. practical circuits are presented.},}

TY - paper
TI - The Germanium Planar FET-A New Device for Radio Applications
SP - 183 EP - 189
AU - Leonard, David N.
AU - Ou, Steve T.
AU - Abernathy, Jack H.
PY - 1967
JO - Journal of the Audio Engineering Society
IS - 2
VO - 15
VL - 15
Y1 - April 1967 TY - paper
TI - The Germanium Planar FET-A New Device for Radio Applications
SP - 183 EP - 189
AU - Leonard, David N.
AU - Ou, Steve T.
AU - Abernathy, Jack H.
PY - 1967
JO - Journal of the Audio Engineering Society
IS - 2
VO - 15
VL - 15
Y1 - April 1967
AB - Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

http://www.aes.org/e-lib/browse.cfm?elib=1100

Planar Fet E

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Planar Fet

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Planar Feta Cheese